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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4746 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed APPLICATIONS *Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 1500 V 800 V 6 V 8 A 20 A 50 W .cn mi e IC Collector Current- Continuous IC(surge) Collector Current-Surge Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4746 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 1.5 V ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 hFE DC Current Gain tf Fall Time w w. w sem isc IC= 1A ; VCE= 5V ICP= 7A , IB1= 1.4A .cn i 8 500 A 38 0.5 s isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4746 w w scs .i w .cn mi e isc Websitewww.iscsemi.cn |
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